2003. 2. 17 1/3 semiconductor technical data KTD882 epitaxial planar npn transistor revision no : 3 audio frequency power amplifier low speed switching features complementary to ktb772. maximum rating (ta=25 ) to-126 h j millimeters c e f g d a b dim a c e f g h j k m o p n l d 1. emitter 2. collector 3. base k l m n o p 8.3 max 5.8 0.7 3.1 0.1 3.5 11.0 0.3 2.9 max 1.0 max 1.9 max 0.75 0.15 14.0 min 2.3 0.1 0.75 0.15 1.6 3.4 max b 1 23 + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) * pulse test : pulse width 350 s, duty cycle 2% pulsed note: h fe (2) classification o:100 200 , y:160 320 , gr:200 400 characteristic symbol rating unit collector-base voltage v cbo 40 v collector-emitter voltage v ceo 30 v emitter-base voltage v ebo 5 v collector current dc i c 3 a pulse (note) i cp 7 base current (dc) i b 0.6 a collector power dissipation ta=25 p c 1.5 w tc=25 10 junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit collector cut-off current i cbo v cb =30v, i e =0 - - 1 a emitter-cut-off current i ebo v eb =3v, i c =0 - - 1 a dc current gain * h fe (1) v ce =2v, i c =20ma 30 150 - h fe (2) (note) v ce =2v, i c =1a 100 160 400 collector-emitter saturation voltage * v ce(sat) i c =2a, i b =0.2a - 0.3 0.5 v base-emitter saturation voltage * v be(sat) i c =2v, i b =0.2a - 1.0 2.0 v current gain bandwidth product f t v ce =5v, i c =0.1a - 90 - mhz collector output capacitance c ob v cb =10v, i e =0, f=1mhz - 45 - pf note : pulse width 10ms, duty cycle 50%.
2003. 2. 17 2/3 KTD882 revision no : 3 c 0 collector current i (a) ce 16 12 820 4 collector-emitter voltage v (v) 0 ce i - v c dc current gain h fe collector current i (ma) c fe h - i c saturation voltage v v (mv) ce(sat), collector current i (ma) c ce(sat) v ,v - i c 0.4 0.8 1.2 1.6 2.0 1 5 10 30 50 100 300 0.01 1k 3 500 10 3 c 0.3 0.1 1 collector current i (a) c f - i t t current gain bandwidth product f (mhz) i =1ma b i =2ma b i =3ma b i =4ma b i =5ma b b i =6ma b i =7ma i =8ma b i =9ma b i =10ma b be(sat) 1 1 5 10 50 30 100 300 500 1k 3 5 10 30 50 100 300 1k 3k v =2v ce 1k 10 13 100 500 300 1k 5 30 50 100 30 300 3k be(sat) i /i =10 c b v (sat) ce v (sat) be 0.03 v =5v ce ob capacitance c (pf) 1 13 10 5 100 50 30 collector-base voltage v (v) 10 30 100 300 i =0 3k 1k cb e 1k 300 500 c - v ob cb f=1mhz 5 k 3 3 1 10 3 collector current i (a) c 3 5 1 collector-emitter voltage v (v) 31030 ce safe operating area 1 0.5 0.3 0.1 0.05 0.03 0.01 10 100 300 1k single nonrepetitive pulse tc=25 c curves must be derated linearly with increase in temperature i max. (pulsed) c i max. (continuous) c dc operation tc=25 c 100 s 1ms 10ms
2003. 2. 17 3/3 KTD882 revision no : 3 c 0 derating dt(%), i 200 150 100 50 case temperature ta ( c) 0 dt - ta 20 80 100 140 160 40 60 120 s/b limited dissipation limited case temperature ta ( c) 0 power dissipation p (w) c 0 2 4 6 10 12 8 14 16 50 100 200 150 pc - ta
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